Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations
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چکیده
منابع مشابه
Intrinsic Threshold Voltage Fluctuations in Decanano MOSFETs Due to Local Oxide Thickness Variations
Intrinsic threshold voltage fluctuations introduced by local oxide thickness variations (OTVs) in deep submicrometer (decanano) MOSFETs are studied using three-dimensional (3-D) numerical simulations on a statistical scale. Quantum mechanical effects are included in the simulations employing the density gradient (DG) formalism. The random Si/SiO2 and gate/SiO2 interfaces are generated from a po...
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In this paper we use the Density Gradient (DG) simulation approach to study, in 3-D, the effect of local oxide thickness fluctuations on the threshold voltage of decanano MOSFETs on a statistical scale. The random 2-D surfaces used to represent the interface are constructed using the standard assumptions for the auto-correlation function of the interface. The importance of the Quantum Mechanica...
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A 3D ‘atomistic’ simulation technique to study random dopant induced threshold voltage lowering and fluctuations in sub 0.1 pm MOSFlETs is presented. It allows statistical analysis of random impurity effects down to the individual impurity level. Efficient algorithms based on a single solution of Poisson’s equation, followed by the solution of a simplified current continuity equation are used i...
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Ultra Thin Body (UTB) MOSFETs offer a solution to the extreme challenges facing the scaling of single gate MOSFETs to nanometre dimensions [1]. Working UTB transistors with a channel length of 6 nm have been successfully demonstrated already [2]. It is clear, however that in order to achieve a reasonable electrostatic integrity at channel lengths smaller than 10 nm the silicon channel thickness...
متن کاملAsenov, A. and Kalna, K. (2000) Effect of oxide interface roughness on the threshold voltage fluctuations in decanano MOSFETs with ultrathin gate oxides. In, International Conference on Simulation of Semiconductor Processes and Devices
In this paper we use the Density Gradient (DG) simulation approach to study, in 3-D, the effect of local oxide thickness fluctuations on the threshold voltage of decanano MOSFETs on a statistical scale. The random 2-D surfaces used to represent the interface are constructed using the standard assumptions for the auto-correlation function of the interface. The importance of the Quantum Mechanica...
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2002
ISSN: 0018-9383
DOI: 10.1109/16.974757